SI4852DY vishay siliconix document number: 71307 s-03184?rev. b, 05-mar-01 www.vishay.com 1 n-channel 30-v (d-s) mosfet with schottky diode
v ds (v) r ds(on) ( ) i d (a) 0.0120 @ v gs = 10 v 11 30 0.0175 @ v gs = 4.5 v 9.5
v ds (v) v sd (v) diode forward voltage i f (a) 30 0.53 v @ 3 a 4 sd s d sd g d so-8 5 6 7 8 top view 2 3 4 1 n-channel mosfet dd g s d schottky diode s d s
parameter symbol 10 secs steady state unit drain-source voltage (mosfet) v ds 30 reverse voltage (schottky) v da 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t a = 25 c 11 8.7 continuous drain current (t j = 150 c) (mosfet) a t a = 70 c i d 9.0 7.0 pulsed drain current (mosfet) i dm 50 continuous source current (mosfet diode conduction) a i s 2.3 1.3 a average foward current (schottky) i f 4.0 2.5 pulsed foward current (schottky) i fm 50 t a = 25 c 2.5 1.47 maximum power dissipation (mosfet) a t a = 70 c 1.6 0.94 t a = 25 c p d 2.27 1.38 w maximum power dissipation (schottky) a t a = 70 c 1.45 0.88 operating junction and storage temperature range t j , t stg ?55 to 150 c
mosfet schottky parameter symbol typ max typ max unit t 10 sec 40 50 45 55 maximum junction-to-ambient a steady-state r thja 72 85 75 90 c/w maximum junction-to-foot (drain) steady-state r thjf 18 22 20 25 c/w notes a. surface mounted on 1? x 1? fr4 board.
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parameter symbol test condition min typ a max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 24 v, v gs = 0 v 0.007 0.100 zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v, t j = 100 c 1.5 10 ma dss v ds = 24 v, v gs = 0 v, t j = 125 c 6.5 20 on-state drain current b i d(on) v ds 5 v, v gs = 10 v 20 a v gs = 10 v, i d = 11 a 0.0100 0.0120 drain-source on-state resistance b r ds(on) v gs = 4.5 v, i d = 9.5 a 0.0145 0.0175 forward transconductance b g fs v ds = 15 v, i d = 11 a 28 s schottky diode forward voltage b i s = 3.0 a, v gs = 0 v 0.485 0.53 schottky diode forward voltage schottky diode forward voltage b v sd i s = 3.0 a, v gs = 0 v, t j = 125 c 0.416 0.47 v dynamic a total gate charge q g 24 35 gate-source charge q gs v ds = 15 v, v gs = 5 v, i d = 11 a 9 nc gate-drain charge q gd ds gs d 7.5 turn-on delay time t d(on) 17 30 rise time t r v dd = 15 v, r l = 15 10 20 turn-off delay time t d(off) v dd = 15 v, r l = 15 i d 1 a, v gen = 10 v, r g = 6 60 100 ns fall time t f 18 30 source-drain reverse recovery time t rr i f = 3.o a, di/dt = 100 a/ s 40 70 notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%.
parameter symbol test condition min typ max unit i f = 3.0 a 0.485 0.53 forward voltage drop v f i f = 3.0 a, t j = 125 c 0.416 0.47 v v r = 24 v 0.007 0.100 maximum reverse leakage current i rm v r = 24 v, t j = 100 c 1.5 10 ma rm v r = ? 24 v, t j = 125 c 6.4 20 junction capacitance c t v r = 10 v 115 pf
SI4852DY vishay siliconix document number: 71307 s-03184 ? rev. b, 05-mar-01 www.vishay.com 3
0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.000 0.004 0.008 0.012 0.016 0.020 0 8 16 24 32 40 0 8 16 24 32 40 0246810 0 700 1400 2100 2800 3500 4200 0 6 12 18 24 30 v gs = 10 thru 4 v 25 c t c = 125 c c oss c iss v gs = 4.5 v v gs = 10 v ? 55 c 3 v output characteristics transfer characteristics on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d v ds ? drain-to-source voltage (v) c ? capacitance (pf) ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance 2 v c rss 0 2 4 6 8 10 0 9 18 27 36 45 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ? 50 ? 25 0 25 50 75 100 125 150 v ds = 15 v i d = 9.8 a v gs = 10 v i d = 9.8 a gate charge ? gate-to-source voltage (v) q g ? total gate charge (nc) v gs on-resistance vs. junction t emperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) )
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reverse current (schottky) ? reverse curent (ma) i r t j ? temperature ( c) 125 150 0.0001 1 30 0 255075100 10 v 0.001 0.01 0.1 10 20 v 30 v 0.001 0 1 100 40 60 10 0.1 single pulse power, junction-to-ambient time (sec) 20 80 power (w) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t j = 150 c 100 10 0.1 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 1 10 600 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 source-drain diode forward voltage normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance v sd ? source-to-drain voltage (v) ? source current (a) i s 1. duty cycle, d = 2. per unit base = r thja = 72 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 100 0.01 t j = 25 c 1 0.00 0.01 0.02 0.03 0.04 0.05 0246810 on-resistance vs. gate-to-source voltage v gs ? gate-to-source voltage (v) i d = 9.8 a ? on-resistance ( r ds(on) )
SI4852DY vishay siliconix document number: 71307 s-03184 ? rev. b, 05-mar-01 www.vishay.com 5
10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance
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